설명Schematic illustration of atomic layer deposition.tif
English: Schematic illustration of one reaction cycle of the atomic layer deposition (ALD) process, using the trimethylaluminium (TMA) - water ALD process to make thin aluminium oxide films as example. Here, the starting surface contains hydroxyls (OH groups) as reactive sites. Step 1 is the reaction of TMA, Step 2 is a purge or evacuation step, Step 3 is the reaction of water, and Step 4 is a purge or evacuation step. This scheme has been first published by Cremers, Puurunen and Dendooven in Applied Physics Reviews, vol. 6, art. 021302, year 2019; https://doi.org/10.1063/1.5060967, Copyright 2019 Authors, licensed under a Creative Commons Attribution (CC BY) 4.0 license.
Schematic illustration of one reaction cycle of the atomic layer deposition (ALD) process, using the trimethylaluminium-water ALD process to make thin aluminium oxide films as example.
Havainnollistus reaktiosyklistä atomikerroskasvatus-menetelmässä (atomic layer deposition, ALD), käyttäen esimerkkinä trimetyylialumiiniin ja veteen perustuvaa prosessia ohuen alumiinioksidikalvon valmistamiseksi.